電(dian)(dian)子(zi)(zi)(zi)束加(jia)熱(re)(re)的蒸鍍(du)源(yuan)(yuan)有(you)直槍(qiang)型(xing)電(dian)(dian)子(zi)(zi)(zi)槍(qiang)和e型(xing)電(dian)(dian)子(zi)(zi)(zi)槍(qiang)兩種(也有(you)環(huan)行(xing))、由電(dian)(dian)子(zi)(zi)(zi)發(fa)射源(yuan)(yuan)(通常(chang)是熱(re)(re)的鎢陰極(ji)作電(dian)(dian)子(zi)(zi)(zi)源(yuan)(yuan))、電(dian)(dian)子(zi)(zi)(zi)加(jia)速(su)電(dian)(dian)源(yuan)(yuan)、柑禍(huo)、磁(ci)場(chang)線圈(quan)、冷卻水(shui)套等(deng)組成(cheng)。膜(mo)料(liao)放入水(shui)冷增禍(huo)中，電(dian)(dian)子(zi)(zi)(zi)束自(zi)源(yuan)(yuan)發(fa)出，用磁(ci)場(chang)線圈(quan)使電(dian)(dian)子(zi)(zi)(zi)束聚(ju)焦和偏轉(zhuan)，對(dui)膜(mo)料(liao)進行(xing)轟(hong)擊和加(jia)熱(re)(re)。e型(xing)電(dian)(dian)子(zi)(zi)(zi)束蒸發(fa)源(yuan)(yuan)所發(fa)射的電(dian)(dian)子(zi)(zi)(zi)軌跡與(yu)“e” 相似，故有(you)“e”型(xing)束源(yuan)(yuan)之稱(cheng)(cheng)，簡(jian)稱(cheng)(cheng)e 型(xing)槍(qiang)。它主要由發(fa)射體組件( 電(dian)(dian)子(zi)(zi)(zi)槍(qiang)) 、偏轉(zhuan)磁(ci)極(ji)靴及(ji)(ji)電(dian)(dian)子(zi)(zi)(zi)線圈(quan)、水(shui)冷坩堝及(ji)(ji)換位機構、散射電(dian)(dian)子(zi)(zi)(zi)及(ji)(ji)離子(zi)(zi)(zi)收集(ji)極(ji)等(deng)部分組成(cheng)。

應用電子(zi)束(shu)蒸發(fa)是將膜(mo)材放入水(shui)冷銅坩堝中，直接利用電子(zi)束(shu)加(jia)熱(re)，使膜(mo)材中的原子(zi)或分子(zi)從表面汽化(hua)逸出(chu)后入射到基片表面凝結成(cheng)膜(mo)。

到(dao)七十年代中(zhong)(zhong)期(qi), 磁(ci)偏(pian)轉電子束蒸(zheng)(zheng)發源(yuan)(yuan)蒸(zheng)(zheng)鍍提高了淀(dian)積率, 并克服了環形槍(qiang)(qiang)蒸(zheng)(zheng)鍍時易發生氣體放(fang)電、功(gong)率較小, 以及直槍(qiang)(qiang)式(shi)蒸(zheng)(zheng)發源(yuan)(yuan)占用空間大(da), x 射(she)線二次電子損傷大(da)的(de)缺點, 而獲得(de)廣泛的(de)應用, 特(te)別在集成電路工(gong)藝中(zhong)(zhong)應用, 達到(dao)了很好的(de)效果(guo)。